BUK108-50GS Specs and Replacement
Type Designator: BUK108-50GS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT404
- MOSFET ⓘ Cross-Reference Search
BUK108-50GS datasheet
..1. Size:93K philips
buk108-50gs 1.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch for automotive PD Total power... See More ⇒
4.1. Size:101K philips
buk108-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for... See More ⇒
5.1. Size:72K philips
buk108-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 13.5 A general purpose switch for... See More ⇒
9.1. Size:72K philips
buk101-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T... See More ⇒
9.2. Size:63K philips
buk107-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current... See More ⇒
9.3. Size:84K philips
buk102-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T... See More ⇒
9.4. Size:90K philips
buk107 50ds hg 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. ... See More ⇒
9.5. Size:68K philips
buk100-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD... See More ⇒
9.6. Size:92K philips
buk109-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 29 A purpose switch for automotive PD Total power... See More ⇒
9.7. Size:86K philips
buk102-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 50 A automotive systems and other PD Total p... See More ⇒
9.8. Size:62K philips
buk107-50ds 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current... See More ⇒
9.9. Size:75K philips
buk109-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P... See More ⇒
9.10. Size:64K philips
buk107-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50 V a general purpose switch for automotive systems and other ID Continuous drain current... See More ⇒
9.11. Size:92K philips
buk107 50dl hg 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. ... See More ⇒
9.12. Size:87K philips
buk101-50gs.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 29 A automotive systems and other PD Total p... See More ⇒
9.13. Size:116K philips
buk104-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo... See More ⇒
9.14. Size:87K philips
buk109-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 V mount envelope, intended as a ID Continuous drain current 26 A general purpose switch for P... See More ⇒
9.15. Size:69K philips
buk102-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD T... See More ⇒
9.16. Size:112K philips
buk106-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch fo... See More ⇒
9.17. Size:152K philips
buk104-50s.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch fo... See More ⇒
9.18. Size:84K philips
buk101-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD T... See More ⇒
9.19. Size:98K philips
buk100-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD... See More ⇒
9.20. Size:88K philips
buk100-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFET DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET in a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 15 A automotive systems and other PD Total p... See More ⇒
Detailed specifications: BUK102-50GS
, BUK104-50L
, BUK104-50LP
, BUK104-50SP
, BUK106-50L
, BUK106-50LP
, BUK106-50S
, BUK106-50SP
, 8N60
, BUK109-50DL
, BUK109-50GL
, BUK109-50GS
, BUK110-50DL
, BUK110-50GL
, BUK110-50GS
, BUK111-50GL
, BUK112-50GL
.
History: BUK110-50GL
Keywords - BUK108-50GS MOSFET specs
BUK108-50GS cross reference
BUK108-50GS equivalent finder
BUK108-50GS pdf lookup
BUK108-50GS substitution
BUK108-50GS replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
