SSM3J16FV Specs and Replacement
Type Designator: SSM3J16FV
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
SSM3J16FV substitution
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SSM3J16FV datasheet
ssm3j16fv.pdf
SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit mm Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) 0.8 0.05 ... See More ⇒
ssm3j16fu.pdf
SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol... See More ⇒
ssm3j16fs.pdf
SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol... See More ⇒
Detailed specifications: SSM3J15CT, SSM3J15FS, SSM3J15FU, SSM3J15FV, SSM3J15F, SSM3J16CT, SSM3J16FS, SSM3J16FU, IRF530, SSM3J304T, SSM3J305T, SSM3J306T, SSM3J307T, SSM3J312T, SSM3J313T, SSM3J314T, SSM3J317T
Keywords - SSM3J16FV MOSFET specs
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