SSM3J306T Datasheet and Replacement. Cross Reference Search

SSM3J306T Datasheet (PDF)

..1. Size:173K toshiba
ssm3j306t.pdf pdf_icon

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Unit: mm Low ON-resistance: Ron = 225 m (max) (@VGS = -4 V) Ron = 117 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC

7.1. Size:207K toshiba
ssm3j307t.pdf pdf_icon

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.5 V drive 2.8-0.3 Low ON-resistance: Ron = 83 m (max) (@VGS = -1.5 V) +0.21.6-0.1Ron = 56 m (max) (@VGS = -1.8 V) Ron = 40 m (max) (@VGS = -2.5 V) Ron = 31 m (max) (@VGS = -4.

7.2. Size:243K toshiba
ssm3j304t.pdf pdf_icon

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 297 m (max) (@VGS = -1.8 V) RDS(ON) = 168 m (max) (@VGS = -2.5 V) RDS(ON) = 127 m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) Character

7.3. Size:173K toshiba
ssm3j305t.pdf pdf_icon

SSM3J305T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 477 m (max) (@VGS = -4 V) Ron = 237 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC ID

Datasheet: SSM3J15FV , SSM3J15F , SSM3J16CT , SSM3J16FS , SSM3J16FU , SSM3J16FV , SSM3J304T , SSM3J305T , IRFP250 , SSM3J307T , SSM3J312T , SSM3J313T , SSM3J314T , SSM3J317T , SSM3J321T , SSM3J325F , SSM3J326T .