All MOSFET. SSM3J306T Datasheet

 

SSM3J306T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3J306T
   Marking Code: JJ9
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.5 nC
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: TSM

 SSM3J306T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3J306T Datasheet (PDF)

 ..1. Size:173K  toshiba
 ssm3j306t.pdf

SSM3J306T SSM3J306T

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Unit: mm Low ON-resistance: Ron = 225 m (max) (@VGS = -4 V) Ron = 117 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC

 7.1. Size:207K  toshiba
 ssm3j307t.pdf

SSM3J306T SSM3J306T

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T Power Management Switch Applications High-Speed Switching Applications Unit: mm+0.2 1.5 V drive 2.8-0.3 Low ON-resistance: Ron = 83 m (max) (@VGS = -1.5 V) +0.21.6-0.1Ron = 56 m (max) (@VGS = -1.8 V) Ron = 40 m (max) (@VGS = -2.5 V) Ron = 31 m (max) (@VGS = -4.

 7.2. Size:243K  toshiba
 ssm3j304t.pdf

SSM3J306T SSM3J306T

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 297 m (max) (@VGS = -1.8 V) RDS(ON) = 168 m (max) (@VGS = -2.5 V) RDS(ON) = 127 m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) Character

 7.3. Size:173K  toshiba
 ssm3j305t.pdf

SSM3J306T SSM3J306T

SSM3J305T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 477 m (max) (@VGS = -4 V) Ron = 237 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC ID

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History: IXTA8N50P | IXTQ82N25P

 

 
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