SSM3J327R Specs and Replacement

Type Designator: SSM3J327R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm

Package: SOT23

SSM3J327R substitution

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SSM3J327R datasheet

 ..1. Size:910K  cn vbsemi
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SSM3J327R

SSM3J327R www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒

 0.1. Size:206K  toshiba
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SSM3J327R

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SSM3J327R

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 7.1. Size:254K  toshiba
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SSM3J327R

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J325F Power Management Switch Applications Unit mm +0.5 1.5-V drive 2.5-0.3 +0.25 Low ON-resistance R = 311 m (max) (@V = -1.5 V) DS(ON) GS 1.5-0.15 R = 231 m (max) (@V = -1.8 V) DS(ON) GS R = 179 m (max) (@V = -2.5 V) DS(ON) GS 1 R = 150 m (max) (@V = -4.5 V) ... See More ⇒

Detailed specifications: SSM3J312T, SSM3J313T, SSM3J314T, SSM3J317T, SSM3J321T, SSM3J325F, SSM3J326T, SSM3J327F, 10N65, SSM3J328R, SSM3J332R, SSM3J334R, SSM3J35CT, SSM3J35FS, SSM3J35MFV, SSM3J36FS, SSM3J36MFV

Keywords - SSM3J327R MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.