SSM3J332R Specs and Replacement

Type Designator: SSM3J332R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT23

SSM3J332R substitution

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SSM3J332R datasheet

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SSM3J332R

SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R Power Management Switch Applications Unit mm +0.08 0.42 +0.08 -0.05 0.17 1.8-V drive 0.05 M A -0.07 3 Low ON-resistance R = 144 m (max) (@V = -1.8 V) DS(ON) GS R = 72.0 m (max) (@V = -2.5 V) DS(ON) GS R = 50.0 m (max) (@V = -4.5 V) DS(ON) GS R = 42.0 m (m... See More ⇒

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SSM3J332R

SSM3J332R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒

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SSM3J332R

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SSM3J332R

SSM3J338R MOSFETs Silicon P-Channel MOS SSM3J338R SSM3J338R SSM3J338R SSM3J338R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 26.3 m (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 m (typ.) (@VGS = -2.5 V) R... See More ⇒

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Detailed specifications: SSM3J314T, SSM3J317T, SSM3J321T, SSM3J325F, SSM3J326T, SSM3J327F, SSM3J327R, SSM3J328R, RFP50N06, SSM3J334R, SSM3J35CT, SSM3J35FS, SSM3J35MFV, SSM3J36FS, SSM3J36MFV, SSM3J36TU, SSM3J46CTB

Keywords - SSM3J332R MOSFET specs

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