All MOSFET. SSM3J334R Datasheet

 

SSM3J334R MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3J334R
   Marking Code: KFL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.9 nC
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.071 Ohm
   Package: SOT23

 SSM3J334R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3J334R Datasheet (PDF)

 ..1. Size:468K  toshiba
 ssm3j334r.pdf

SSM3J334R SSM3J334R

SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R Power Management Switch Applications Unit: mm Low ON-resistance: R = 71 m (max) (@V = -10 V) DS(ON) GS R = 105 m (max) (@V = -4.5 V) DS(ON) GS R = 136 m (max) (@V = -4.0 V) DS(ON) GSAbsolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source v

 7.1. Size:209K  toshiba
 ssm3j332r..pdf

SSM3J334R SSM3J334R

 7.2. Size:350K  toshiba
 ssm3j338r.pdf

SSM3J334R SSM3J334R

SSM3J338RMOSFETs Silicon P-Channel MOSSSM3J338RSSM3J338RSSM3J338RSSM3J338R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 26.3 m (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 m (typ.) (@VGS = -2.5 V) R

 7.3. Size:230K  toshiba
 ssm3j331r.pdf

SSM3J334R SSM3J334R

SSM3J331RMOSFETs Silicon P-Channel MOS (U-MOS)SSM3J331RSSM3J331RSSM3J331RSSM3J331R1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 150 m (max) (@VGS = -1.5 V) RDS(ON) = 100 m (max) (@VGS = -1.8

 7.4. Size:412K  toshiba
 ssm3j332r.pdf

SSM3J334R SSM3J334R

SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R Power Management Switch Applications Unit: mm +0.080.42+0.08-0.050.17 1.8-V drive 0.05M A -0.073 Low ON-resistance: R = 144 m (max) (@V = -1.8 V) DS(ON) GS R = 72.0 m (max) (@V = -2.5 V) DS(ON) GS R = 50.0 m (max) (@V = -4.5 V) DS(ON) GS R = 42.0 m (m

 7.5. Size:867K  cn vbsemi
 ssm3j332r.pdf

SSM3J334R SSM3J334R

SSM3J332Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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