SSM3J35CT Specs and Replacement

Type Designator: SSM3J35CT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 10.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT883 CST3

SSM3J35CT substitution

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SSM3J35CT datasheet

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SSM3J35CT

SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT High-Speed Switching Applications Unit mm Analog Switch Applications 1.2-V drive Low ON-resistance R = 44 (max) (@V = -1.2 V) on GS R = 22 (max) (@V = -1.5 V) on GS R = 11 (max) (@V = -2.5 V) on GS R = 8 (max) (@V = -4.0 V) on GS Absolute Maximum Ratin... See More ⇒

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SSM3J35CT

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SSM3J35CT

SSM3J356R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J356R SSM3J356R SSM3J356R SSM3J356R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 400 m (max) (@VGS = -4.0 V) RDS(ON) = 300 m (max) (@VGS = -10 V)... See More ⇒

 7.3. Size:247K  toshiba
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SSM3J35CT

SSM3J35MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35MFV High-Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 1.2 V drive 0.8 0.05 Low ON-resistance R = 44 (max) (@V = -1.2 V) on GS R = 22 (max) (@V = -1.5 V) on GS 1 R = 11 (max) (@V = -2.5 V) on GS R = 8 (max) (@V = -4.0 V) o... See More ⇒

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Detailed specifications: SSM3J321T, SSM3J325F, SSM3J326T, SSM3J327F, SSM3J327R, SSM3J328R, SSM3J332R, SSM3J334R, AO3407, SSM3J35FS, SSM3J35MFV, SSM3J36FS, SSM3J36MFV, SSM3J36TU, SSM3J46CTB, SSM3J56MFV, SSM3K01F

Keywords - SSM3J35CT MOSFET specs

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