SSM3K15FU MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3K15FU
Marking Code: DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 8.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT323 SC70 USM
SSM3K15FU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3K15FU Datasheet (PDF)
ssm3k15fu.pdf
SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 30 VGate-sour
ssm3k15f.pdf
SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit: mmAnalog Switch Applications +0.52.5-0.3+0.25 Small package 1.5-0.15 Low on resistance : Ron = 4.0 (max) (@VGS = 4 V) 1: Ron = 7.0 (max) (@VGS = 2.5 V) 2 3Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrai
ssm3k15fs .pdf
SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDr
ssm3k15fv.pdf
SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm1.20.05 Optimum for high-density mounting in small packages 0.80.05 Low on-resistance : RDS(ON) = 4.0 (max) (@VGS = 4 V) : RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1Absolute Maximum Ratings (Ta = 25C) 3Char
ssm3k15fs.pdf
SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit: mmAnalog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : R = 4.0 (max) (@V = 4 V) on GS: R = 7.0 (max) (@V = 2.5 V) on GSMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating Uni
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