All MOSFET. SSM3K318T Datasheet

 

SSM3K318T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3K318T
   Marking Code: KDX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   Cossⓘ - Output Capacitance: 30.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.107 Ohm
   Package: TSM

 SSM3K318T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3K318T Datasheet (PDF)

 ..1. Size:212K  toshiba
 ssm3k318t.pdf

SSM3K318T SSM3K318T

SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit: mm+0.2 4.5 V drive 2.8-0.3 Low ON-resistance : RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.21.6-0.1: RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Sy

 6.1. Size:226K  toshiba
 ssm3k318r.pdf

SSM3K318T SSM3K318T

SSM3K318RMOSFETs Silicon N-Channel MOSSSM3K318RSSM3K318RSSM3K318RSSM3K318R1. Applications1. Applications1. Applications1. Applications Load Switches Ultra-High-Speed Switching2. Features2. Features2. Features2. Features(1) 4.5-V gate drive voltage.(2) Low drain-source on-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) RDS(ON) = 107 m (max) (@VGS

 7.1. Size:206K  toshiba
 ssm3k315t.pdf

SSM3K318T SSM3K318T

SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM3K315T High-Speed Switching Applications Unit: mm 4.5-V drive +0.2 Low ON-resistance : Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3: Ron = 27.6 m (max) (@VGS = 10 V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Source

 7.2. Size:188K  toshiba
 ssm3k310t.pdf

SSM3K318T SSM3K318T

SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit: mm Low ON-resistance: Ron = 66 m (max) (@VGS = 1.5 V) +0.22.8-0.3Ron = 43 m (max) (@VGS = 1.8 V) +0.2Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C)

 7.3. Size:220K  toshiba
 ssm3k311t.pdf

SSM3K318T SSM3K318T

SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 43m (max) (@VGS = 4V) +0.22.8-0.3 : Ron = 32m (max) (@VGS = 10V) +0.21.6-0.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS 30 VGat

 7.4. Size:174K  toshiba
 ssm3k316t.pdf

SSM3K318T SSM3K318T

SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 m (max) (@VGS = 1.8 V) Ron = 87 m (max) (@VGS = 2.5 V) Ron = 65 m (max) (@VGS = 4.5 V) Ron = 53 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Ch

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