All MOSFET. SSM6J213FE Datasheet

 

SSM6J213FE Datasheet and Replacement


   Type Designator: SSM6J213FE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm
   Package: SOT563 ES6
 

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SSM6J213FE Datasheet (PDF)

 ..1. Size:202K  toshiba
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SSM6J213FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.1. Size:226K  toshiba
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SSM6J213FE

SSM6J215FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J215FESSM6J215FESSM6J215FESSM6J215FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

 7.2. Size:157K  toshiba
ssm6j21tu.pdf pdf_icon

SSM6J213FE

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J21TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12

 7.3. Size:215K  toshiba
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SSM6J213FE

SSM6J216FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J216FESSM6J216FESSM6J216FESSM6J216FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS

Datasheet: SSM5P16FU , SSM6J06FU , SSM6J07FU , SSM6J08FU , SSM6J205FE , SSM6J206FE , SSM6J207FE , SSM6J212FE , STF13NM60N , SSM6J214FE , SSM6J21TU , SSM6J23FE , SSM6J25FE , SSM6J26FE , SSM6J401TU , SSM6J402TU , SSM6J409TU .

History: RHK005N03T146 | UPA1764G | SSM5N15FE | STD5NK50ZT4 | SUM18N25-165 | IPA50R950CE | 6N60KG-TA3-T

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