All MOSFET. SSM6J213FE Datasheet

 

SSM6J213FE Datasheet and Replacement


   Type Designator: SSM6J213FE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm
   Package: SOT563 ES6
      - MOSFET Cross-Reference Search

 

SSM6J213FE Datasheet (PDF)

 ..1. Size:202K  toshiba
ssm6j213fe.pdf pdf_icon

SSM6J213FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 7.1. Size:226K  toshiba
ssm6j215fe.pdf pdf_icon

SSM6J213FE

SSM6J215FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J215FESSM6J215FESSM6J215FESSM6J215FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

 7.2. Size:157K  toshiba
ssm6j21tu.pdf pdf_icon

SSM6J213FE

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J21TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12

 7.3. Size:215K  toshiba
ssm6j216fe.pdf pdf_icon

SSM6J213FE

SSM6J216FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J216FESSM6J216FESSM6J216FESSM6J216FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT

Keywords - SSM6J213FE MOSFET datasheet

 SSM6J213FE cross reference
 SSM6J213FE equivalent finder
 SSM6J213FE lookup
 SSM6J213FE substitution
 SSM6J213FE replacement

 

 
Back to Top

 


 
.