All MOSFET. SSM6J25FE Datasheet

 

SSM6J25FE Datasheet and Replacement


   Type Designator: SSM6J25FE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT563 ES6
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SSM6J25FE Datasheet (PDF)

 ..1. Size:152K  toshiba
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SSM6J25FE

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 260m (max) (@VGS = -4 V) 1.20.05Ron = 430m (max) (@VGS = -2.5 V) 1 65Maximum Ratings (Ta = 25C) 243Characteristics Symbol Rating Uni

 8.1. Size:305K  toshiba
ssm6j206fe.pdf pdf_icon

SSM6J25FE

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE Power Management Switch Applications Unit: mm High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 m (max) (@VGS = -1.8 V) Ron = 186 m (max) (@VGS = -2.5 V) R = 130 m (max) (@V = -4.0 V) on GS Lead (Pb) free Maximum Ratings (Ta = 25C) Cha

 8.2. Size:250K  toshiba
ssm6j23fe.pdf pdf_icon

SSM6J25FE

SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J23FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on-resistance: Ron = 160 m (max) (@VGS = -4.0 V) Ron = 210 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDra

 8.3. Size:202K  toshiba
ssm6j213fe.pdf pdf_icon

SSM6J25FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

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History: NCE1570 | RU40E80L | FRM430R | APT5014SLLG | NVTA7002N | UPA1720 | IRF630M

Keywords - SSM6J25FE MOSFET datasheet

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