SSM6L14FE PDF and Equivalents Search

 ..1. Size:233K  toshiba
 ssm6l14fe.pdf

SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit mm 1.6 0.05 N-ch 1.5-V drive P-ch 1.5-V drive 1.2 0.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-... See More ⇒

 8.1. Size:233K  toshiba
 ssm6l13tu.pdf

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 1.8-V drive N ch , P ch 2 in 1 1.7 0.1 Low ON resistance Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) Pch RDS(ON) = 460 m (max) (@... See More ⇒

 8.2. Size:214K  toshiba
 ssm6l11tu.pdf

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1 RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2 RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit mm 2.1 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) 1.7 0.1 Characteristics Symbol Rating U... See More ⇒

 8.3. Size:209K  toshiba
 ssm6l10tu.pdf

SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1 Ron = 395m (max) (@VGS = 1.8 V) Unit mm Q2 Ron = 980m (max) (@VGS = -1.8 V) 2.1 0.1 1.7 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 ... See More ⇒

 8.4. Size:204K  toshiba
 ssm6l16fe.pdf

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type( -MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance Q1 RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2 RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source volta... See More ⇒

 8.5. Size:233K  toshiba
 ssm6l12tu.pdf

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1 RDS(ON) = 180m (max) (@VGS = 2.5 V) Unit mm Q2 RDS(ON) = 430m (max) (@VGS = -2.5 V) 2.1 0.1 1.7 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating... See More ⇒