SSM6L35FE Specs and Replacement

Type Designator: SSM6L35FE

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 9.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT563 ES6

SSM6L35FE substitution

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SSM6L35FE datasheet

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SSM6L35FE

SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE High-Speed Switching Applications Unit mm Analog Switch Applications 1.6 0.05 1.2 0.05 N-ch 1.2-V drive P-ch 1.2-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch Ron = 20 (max) (@VGS = 1.2 V) 2 5 Ron = 8 (max) (@VGS = 1.5 V) Ron = 4 (max) (... See More ⇒

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SSM6L35FE

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SSM6L35FE

SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit mm High-Speed Switching Applications 2.1 0.1 1.7 0.1 1.5-V drive Low ON-resistance Q1 N-ch Ron = 1.52 (max) (@VGS = 1.5 V) 1 6 Ron = 1.14 (max) (@VGS = 1.8 V) 2 5 Ron = 0.85 (max) (@VGS = 2.5 V) 3 4 Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = ... See More ⇒

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SSM6L35FE

SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit mm 1.6 0.05 1.5-V drive 1.2 0.05 Low ON-resistance Q1 Nch Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) 1 6 Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) 2 ... See More ⇒

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Detailed specifications: SSM6L05FU, SSM6L09FU, SSM6L10TU, SSM6L11TU, SSM6L12TU, SSM6L13TU, SSM6L14FE, SSM6L16FE, IRFP460, SSM6L35FU, SSM6L36FE, SSM6L36TU, SSM6L39TU, SSM6L40TU, SSM6N04FU, SSM6N05FU, SSM6N09FU

Keywords - SSM6L35FE MOSFET specs

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