BUK204-50Y
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK204-50Y
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SOT426
BUK204-50Y
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK204-50Y
Datasheet (PDF)
..1. Size:99K philips
buk204-50y 1.pdf 
Philips Semiconductors Product specification TOPFET high side switch BUK204-50Y SMD version of BUK200-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
5.1. Size:98K philips
buk204-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK204-50X SMD version of BUK200-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.1. Size:94K philips
buk206-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK206-50X SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.2. Size:92K philips
buk203-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.3. Size:93K philips
buk202-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.4. Size:94K philips
buk207-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
9.5. Size:97K philips
buk205-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK205-50X SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.6. Size:91K philips
buk203-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.7. Size:95K philips
buk201-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.8. Size:96K philips
buk200-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK200-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.9. Size:93K philips
buk202-50x 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.10. Size:97K philips
buk200-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 3.5 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPL
9.11. Size:96K philips
buk201-50y 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic envelope, configuredas a single high side switch.SYMBOL PARAMETER MAX. UNITAPPLIC
9.12. Size:98K philips
buk205-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK205-50Y SMD version of BUK201-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.13. Size:95K philips
buk206-50y 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK206-50Y SMD version of BUK202-50Y DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 9 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAMET
9.14. Size:93K philips
buk207-50x 1.pdf
Philips Semiconductors Product specification TOPFET high side switch BUK207-50X SMD version of BUK203-50X DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MIN. UNIToverload protected power switchbased on MOSFET technology in a IL Nominal load current (ISO) 1.6 A5 pin plastic surface mountenvelope, configured as a singlehigh side switch. SYMBOL PARAM
Datasheet: BUK112-50GL
, BUK114-50L
, BUK114-50S
, BUK116-50L
, BUK116-50S
, BUK200-50X
, BUK203-50X
, BUK203-50Y
, 2SK3918
, BUK207-50X
, BUK207-50Y
, BUK426-1000A
, BUK426-1000B
, BUK436W-1000B
, BUK436W-200A
, BUK436W-200B
, BUK436W-800A
.
