SSM6N16FU PDF and Equivalents Search

 ..1. Size:133K  toshiba
 ssm6n16fu.pdf

SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

 6.1. Size:132K  toshiba
 ssm6n16fe.pdf

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 8.1. Size:153K  toshiba
 ssm6n15fu.pdf

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit mm Analog Switching Applications Small package Low ON resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V... See More ⇒

 8.2. Size:184K  toshiba
 ssm6n15fe.pdf

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit mm Analog Switching Applications Small package Low ON resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V... See More ⇒

 8.3. Size:117K  toshiba
 ssm6n17fu.pdf

SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltag... See More ⇒

 8.4. Size:166K  toshiba
 ssm6n15afe.pdf

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit mm 1.6 0.05 2.5 V drive N-ch 2-in-1 1.2 0.05 Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6 Absolute Maximum Ratings (Ta = 25 C) 2 5 (Q1, Q2 Common) 3 4 Characteristics Symbol ... See More ⇒

 8.5. Size:190K  toshiba
 ssm6n15afu.pdf

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit mm 2.5 V drive N-ch 2-in-1 Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDSS... See More ⇒