SSM6P15FE Specs and Replacement

Type Designator: SSM6P15FE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 8.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: SOT563 ES6

SSM6P15FE substitution

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SSM6P15FE datasheet

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SSM6P15FE

SSM6P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 ... See More ⇒

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SSM6P15FE

SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS -3... See More ⇒

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SSM6P15FE

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SSM6P15FE

SSM6P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM6P16FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Char... See More ⇒

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Detailed specifications: SSM6N44FE, SSM6N44FU, SSM6N48FU, SSM6N7002BFE, SSM6N7002BFU, SSM6N7002FU, SSM6P05FU, SSM6P09FU, 5N65, SSM6P15FU, SSM6P16FE, SSM6P16FU, SSM6P25TU, SSM6P26TU, SSM6P28TU, SSM6P35FE, SSM6P35FU

Keywords - SSM6P15FE MOSFET specs

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