BUK426-1000B Datasheet and Replacement

   Type Designator: BUK426-1000B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 1.25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT199
     - MOSFET ⓘ Cross-Reference Search