SSM6P26TU Datasheet and Replacement

SSM6P26TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P26TU High Speed Switching Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance: Ron = 230m (max) (@VGS = -4 V) 2.10.1Ron = 330m (max) (@VGS = -2.5 V) 1.70.1Ron = 980m (max) (@VGS = -1.8 V) 1 6Absolute Maximum Ratings (Ta = 25C)

SSM6P25TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P25TU High Speed Switching Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance: Ron = 260m (max) (@VGS = -4 V) 2.10.1Ron = 430m (max) (@VGS = -2.5 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1 6(Q1, Q2 Common) 52Characterist

SSM6P28TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive2.10.1 P-ch 2-in-11.70.1 Low ON-resistance: Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) 1 6Ron = 234 m (max) (@VGS = -4.0 V) 52Absolute Maximum Rati

SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V) SSM6P41FE Power Management Switches 1.5-V drive Low on-resistance : RDS(ON) = 1.04 (max) (@VGS = -1.5 V) Unit: mm: RDS(ON) = 0.67 (max) (@VGS = -1.8 V) 1.60.05: RDS(ON) = 0.44 (max) (@VGS = -2.5 V) 1.20.05: RDS(ON) = 0.30 (max) (@VGS = -4.5 V) 1 6Absolute Maximum R

SSM6P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM6P16FE High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : R 8 (max) (@VGS 4 V) DS(ON) : R 12 (max) (@VGS 2.5 V) DS(ON): R 45 (max) (@VGS 1.5 V) DS(ON)Absolute Maximum Ratings (Ta = 25

SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) Unit: mmRon = 2.70 (max) (@VGS = -1.8 V) 1.60.05Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25 C) 1 6(Common t

SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) 2.10.1: Ron = 2.70 (max) (@VGS = -1.8 V) 1.70.1: Ron = 1.60 (max) (@VGS = -2.8 V) : Ron = 1.31 (max) (@VGS = -4.5 V) 1 6Absolute Maximum Ratings (Ta = 25 C) 2 5

SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance. : Ron = 2.7 (max) (@VGS = -10 V) : Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate

SSM6P05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P05FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Ratin

SSM6P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30

SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -3

SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications Unit: mm2.00.1B 1.5V drive A Low ON-resistance:RDS(on) = 242 m (max) (@VGS = -1.5 V) RDS(on) = 170 m (max) (@VGS = -1.8 V) RDS(on) = 125 m (max) (@VGS = -2.5 V) RDS(on) = 95 m (max) (@VGS = -4.5 V) 00.05Absolute Maximum

SSM6P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM6P16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Char

SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications Unit: mm2.00.1B 1.8V drive A Low ON-resistance: RDS(on) = 157 m (max) (@VGS = -1.8 V) RDS(on) = 76 m (max) (@VGS = -2.5 V) RDS(on) = 56 m (max) (@VGS = -4.5 V) RDS(on) = 45 m (max) (@VGS = -10V) 00.05Absolute Maximum Ratings (Ta =

SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) : Ron = 11 (max) (@VGS = -2.5 V) : Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 2

SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU High-Speed Switching Applications Unit : mm Power Management Switch Applications 2.10.1 1.5 V drive 1.70.1 Suitable for high-density mounting due to compact package Low on-resistance : Ron = 228 m (max) (@ VGS = -2.5 V) : Ron = 350 m (max) (@ VGS = -1.8 V) 1 6: Ron =

SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU Power Management Switch Applications Unit: mm2.10.1 High-Speed Switching Applications 1.70.1 4.0 V drive P-ch, 2-in-1 1 6 Low ON-resistance: Ron = 403m (max) (@VGS = 4 V) 2 5Ron = 226m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25 C) (Q1,Q2 C

SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm Power Management Switch Applications 2.10.1 High-Speed Switching Applications 1.70.11 6 1.8 V drive 2 5 P-ch 2-in-1 Low ON-resistance: Ron = 430m (max) (@VGS = 1.8 V) 3 4Ron = 294m (max) (@VGS = 2.5 V) Ron = 213m (max) (@VGS = 4.0 V) Abso

SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) 1 6 : Ron = 11 (max) (@VGS = -2.5 V) 25: Ron = 8 (max) (@VGS = -4.0 V) 3