TK13A65U MOSFET. Datasheet pdf. Equivalent
Type Designator: TK13A65U
Marking Code: K13A65U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 2300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO220SIS
TK13A65U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK13A65U Datasheet (PDF)
tk13a65u.pdf
TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V) Enhancement-mod
tk13a65u.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65UITK13A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.32 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSw
tk13a65d.pdf
TK13A65DMOSFETs Silicon N-Channel MOS (-MOS)TK13A65DTK13A65DTK13A65DTK13A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.4 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: IDS
tk13a65d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65DITK13A65DFEATURESLow drain-source on-resistance:RDS(on) = 0.4 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
tk13a60d.pdf
TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK13A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab
tk13a60d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A60DITK13A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.33 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk13a60w.pdf
isc N-Channel MOSFET Transistor TK13A60WFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
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