TK14A45DA
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK14A45DA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Id|ⓘ - Maximum Drain Current: 13.5
A
Qgⓘ - Total Gate Charge: 28
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.41
Ohm
Package:
TO220SIS
TK14A45DA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK14A45DA
Datasheet (PDF)
9.1. Size:180K toshiba
tk14a55d.pdf 
TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK14A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.2. Size:234K toshiba
tk14a65w5.pdf
TK14A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14A65W5TK14A65W5TK14A65W5TK14A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc
9.3. Size:238K toshiba
tk14a65w.pdf
TK14A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14A65WTK14A65WTK14A65WTK14A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
9.4. Size:252K inchange semiconductor
tk14a55d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A55DITK14A55DFEATURESLow drain-source on-resistance:RDS(on) = 0.31 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
9.5. Size:253K inchange semiconductor
tk14a65w5.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65W5ITK14A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.3Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulator
9.6. Size:253K inchange semiconductor
tk14a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65WITK14A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.25Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators
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