TK15A60D
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK15A60D
Marking Code: K15A60D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 45
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.37
Ohm
Package:
TO220SIS
TK15A60D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK15A60D
Datasheet (PDF)
..1. Size:189K toshiba
tk15a60d.pdf 
TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A60D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth
7.1. Size:1269K toshiba
tk15a60u.pdf
TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
7.2. Size:252K inchange semiconductor
tk15a60u.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK15A60U, ITK15A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.3 (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID=1 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION
9.1. Size:232K toshiba
tk15a20d.pdf
TK15A20DMOSFETs Silicon N-Channel MOS (-MOS)TK15A20DTK15A20DTK15A20DTK15A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =
9.2. Size:188K toshiba
tk15a50d.pdf
TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs
9.3. Size:257K inchange semiconductor
tk15a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK15A50DITK15A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.24 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
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