TK20A25D Specs and Replacement
Type Designator: TK20A25D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 20
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 150
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO220SIS
-
MOSFET ⓘ Cross-Reference Search
TK20A25D Specs
..1. Size:232K toshiba
tk20a25d.pdf 
TK20A25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK20A25D TK20A25D TK20A25D TK20A25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth ... See More ⇒
..2. Size:251K inchange semiconductor
tk20a25d.pdf 
isc N-Channel MOSFET Transistor TK20A25D FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 100m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
8.1. Size:219K toshiba
tk20a20d.pdf 
TK20A20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK20A20D TK20A20D TK20A20D TK20A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.07 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth =... See More ⇒
8.2. Size:253K inchange semiconductor
tk20a20d.pdf 
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK20A20D ITK20A20D FEATURES Low drain-source on-resistance RDS(ON) = 0.07 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒
9.1. Size:234K toshiba
tk20a60w5.pdf 
TK20A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W5 TK20A60W5 TK20A60W5 TK20A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str... See More ⇒
9.2. Size:273K toshiba
tk20a60u.pdf 
TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒
9.3. Size:243K toshiba
tk20a60w.pdf 
TK20A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W TK20A60W TK20A60W TK20A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
9.4. Size:205K toshiba
tk20a60t.pdf 
TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M... See More ⇒
9.5. Size:253K inchange semiconductor
tk20a60w5.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.15 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regula... See More ⇒
9.6. Size:253K inchange semiconductor
tk20a60u.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60U, ITK20A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.165 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION S... See More ⇒
9.7. Size:253K inchange semiconductor
tk20a60w.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W, ITK20A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.155 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat... See More ⇒
Detailed specifications: TK17J65U
, TK18A30D
, TK18A50D
, TK18A60V
, TK19A45D
, TK19J55D
, TK1P90A
, TK1Q90A
, 4435
, TK20A60U
, TK20E60U
, TK20J50D
, TK20J60U
, TK20P04M1
, TK20S04K3L
, TK20S06K3L
, TK20X60U
.
Keywords - TK20A25D MOSFET specs
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