TK20A25D
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK20A25D
Marking Code: K20A25D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO220SIS
TK20A25D
Datasheet (PDF)
..1. Size:232K toshiba
tk20a25d.pdf 
TK20A25DMOSFETs Silicon N-Channel MOS (-MOS)TK20A25DTK20A25DTK20A25DTK20A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth
..2. Size:251K inchange semiconductor
tk20a25d.pdf
isc N-Channel MOSFET Transistor TK20A25DFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.1. Size:219K toshiba
tk20a20d.pdf
TK20A20DMOSFETs Silicon N-Channel MOS (-MOS)TK20A20DTK20A20DTK20A20DTK20A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.07 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =
8.2. Size:253K inchange semiconductor
tk20a20d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK20A20DITK20A20DFEATURESLow drain-source on-resistance:RDS(ON) = 0.07 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
9.1. Size:234K toshiba
tk20a60w5.pdf
TK20A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20A60W5TK20A60W5TK20A60W5TK20A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str
9.2. Size:273K toshiba
tk20a60u.pdf
TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
9.3. Size:243K toshiba
tk20a60w.pdf
TK20A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20A60WTK20A60WTK20A60WTK20A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
9.4. Size:205K toshiba
tk20a60t.pdf
TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M
9.5. Size:253K inchange semiconductor
tk20a60w5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.15 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula
9.6. Size:253K inchange semiconductor
tk20a60u.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60U, ITK20A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.165 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS
9.7. Size:253K inchange semiconductor
tk20a60w.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W, ITK20A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.155 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat
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