TK20S04K3L Specs and Replacement

Type Designator: TK20S04K3L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DPAK

TK20S04K3L substitution

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TK20S04K3L datasheet

 ..1. Size:236K  toshiba
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TK20S04K3L

TK20S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK20S04K3L TK20S04K3L TK20S04K3L TK20S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 11 m (typ.) (VGS = 10 V) (2) Low leakage current ... See More ⇒

 8.1. Size:236K  toshiba
tk20s06k3l.pdf pdf_icon

TK20S04K3L

TK20S06K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK20S06K3L TK20S06K3L TK20S06K3L TK20S06K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VGS = 10 V) (2) Low leakage current ... See More ⇒

 8.2. Size:769K  cn vbsemi
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TK20S04K3L

TK20S06K3L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise ... See More ⇒

Detailed specifications: TK1P90A, TK1Q90A, TK20A25D, TK20A60U, TK20E60U, TK20J50D, TK20J60U, TK20P04M1, 12N60, TK20S06K3L, TK20X60U, TK25A10K3, TK25A20D, TK2A65D, TK2P60D, TK2Q60D, TK30A06J3A

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