All MOSFET. TK20S04K3L Datasheet

 

TK20S04K3L Datasheet and Replacement


   Type Designator: TK20S04K3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DPAK
 

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TK20S04K3L Datasheet (PDF)

 ..1. Size:236K  toshiba
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TK20S04K3L

TK20S04K3LMOSFETs Silicon N-channel MOS (U-MOS )TK20S04K3LTK20S04K3LTK20S04K3LTK20S04K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 11 m (typ.) (VGS = 10 V)(2) Low leakage current:

 8.1. Size:236K  toshiba
 tk20s06k3l.pdf pdf_icon

TK20S04K3L

TK20S06K3LMOSFETs Silicon N-channel MOS (U-MOS )TK20S06K3LTK20S06K3LTK20S06K3LTK20S06K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VGS = 10 V)(2) Low leakage current:

 8.2. Size:769K  cn vbsemi
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TK20S04K3L

TK20S06K3Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

Datasheet: TK1P90A , TK1Q90A , TK20A25D , TK20A60U , TK20E60U , TK20J50D , TK20J60U , TK20P04M1 , 4N60 , TK20S06K3L , TK20X60U , TK25A10K3 , TK25A20D , TK2A65D , TK2P60D , TK2Q60D , TK30A06J3A .

History: SWI7N65K2 | IXTQ40N50L2 | SPE7N65G | 2SK1520 | JCS9AN50VC | DH012N03 | SI1025X

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