BUK446-1000B PDF and Equivalents Search

 ..1. Size:50K  philips
 buk446-1000b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 1.5 A Switched Mode Power Supplies Ptot Total power dissipation ... See More ⇒

 7.1. Size:51K  philips
 buk446-800a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK446 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 2.0 1.7... See More ⇒

 7.2. Size:230K  inchange semiconductor
 buk446-800.pdf

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 9.1. Size:66K  philips
 buk444-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Ptot Total power dissipation ... See More ⇒

 9.2. Size:59K  philips
 buk444-200a-b.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 5.3 4.7... See More ⇒

 9.3. Size:52K  philips
 buk444-800a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 1.4 1.2... See More ⇒

 9.4. Size:59K  philips
 buk444-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 5.3 4.7... See More ⇒

 9.5. Size:347K  philips
 buk445-60a-b.pdf

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 9.6. Size:109K  philips
 buk445-60h.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22.5 A Automotive applications, Switched Ptot Total power dissipatio... See More ⇒

 9.7. Size:56K  philips
 buk445-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK445-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 7.6 7 A... See More ⇒

 9.8. Size:226K  inchange semiconductor
 buk444-200.pdf

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 9.9. Size:230K  inchange semiconductor
 buk444-600ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK444-600A/B DESCRIPTION Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE... See More ⇒

 9.10. Size:230K  inchange semiconductor
 buk445-600ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK445-600A/B DESCRIPTION Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE... See More ⇒

 9.11. Size:230K  inchange semiconductor
 buk445-400ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK445-400A/B DESCRIPTION Drain Source Voltage- V =400V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE... See More ⇒

 9.12. Size:226K  inchange semiconductor
 buk444-800.pdf

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 9.13. Size:229K  inchange semiconductor
 buk445-200.pdf

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 9.14. Size:230K  inchange semiconductor
 buk445-60.pdf

isc N-Channel MOSFET Transistor BUK445-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

 9.15. Size:230K  inchange semiconductor
 buk445-100ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK445-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE... See More ⇒