BUK446-1000B Datasheet and Replacement
Type Designator: BUK446-1000B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5
Ohm
Package:
SOT186
- MOSFET Cross-Reference Search
BUK446-1000B Datasheet (PDF)
..1. Size:50K philips
buk446-1000b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 1000 VThe device is intended for use in ID Drain current (DC) 1.5 ASwitched Mode Power Supplies Ptot Total power dissipation
7.1. Size:51K philips
buk446-800a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK446 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 2.0 1.7
7.2. Size:230K inchange semiconductor
buk446-800.pdf
isc N-Channel MOSFET Transistor BUK446-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25
9.1. Size:66K philips
buk444-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched Ptot Total power dissipation
9.2. Size:59K philips
buk444-200a-b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK444 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 5.3 4.7
9.3. Size:52K philips
buk444-800a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK444 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 1.4 1.2
9.4. Size:59K philips
buk444-200a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK444 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 5.3 4.7
9.6. Size:109K philips
buk445-60h.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 22.5 AAutomotive applications, Switched Ptot Total power dissipatio
9.7. Size:56K philips
buk445-200a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK445-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK445 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 7.6 7 A
9.8. Size:226K inchange semiconductor
buk444-200.pdf
isc N-Channel MOSFET Transistor BUK444-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25
9.9. Size:230K inchange semiconductor
buk444-600ab.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK444-600A/BDESCRIPTIONDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
9.10. Size:230K inchange semiconductor
buk445-600ab.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK445-600A/BDESCRIPTIONDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
9.11. Size:230K inchange semiconductor
buk445-400ab.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK445-400A/BDESCRIPTIONDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
9.12. Size:226K inchange semiconductor
buk444-800.pdf
isc N-Channel MOSFET Transistor BUK444-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25
9.13. Size:229K inchange semiconductor
buk445-200.pdf
isc N-Channel MOSFET Transistor BUK445-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25
9.14. Size:230K inchange semiconductor
buk445-60.pdf
isc N-Channel MOSFET Transistor BUK445-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25)
9.15. Size:230K inchange semiconductor
buk445-100ab.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK445-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
Datasheet: BUK436W-200B
, BUK436W-800A
, BUK436W-800B
, BUK438W-800A
, BUK438W-800B
, BUK444-800A
, BUK444-800B
, BUK445-200A
, IRF540N
, BUK446-800A
, BUK446-800B
, BUK452-100A
, BUK453-100A
, BUK454-800A
, BUK454-800B
, BUK455-100A
, BUK455-200A
.
History: IPI023NE7N3G
| SVGP20110NSTR
| BSO211PH
| MXP4004AT
| WPM2026
| KO3415
| MEE42942-G
Keywords - BUK446-1000B MOSFET datasheet
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