All MOSFET. TK4P55DA Datasheet

 

TK4P55DA Datasheet and Replacement


   Type Designator: TK4P55DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.45 Ohm
   Package: DPAK
 

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TK4P55DA Datasheet (PDF)

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TK4P55DA

TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.4 to 4.4

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TK4P55DA

TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.5 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode: Vth = 2.4 to 4.

 9.1. Size:210K  toshiba
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TK4P55DA

TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4

Datasheet: TK4A53D , TK4A55DA , TK4A55D , TK4A60DA , TK4A60DB , TK4A60D , TK4A65DA , TK4P50D , IRFZ46N , TK4P55D , TK4P60DA , TK4P60DB , TK50J30D , TK50J60U , TK50P03M1 , TK50P04M1 , TK50X15J1 .

History: SWP050R68E8T | AFP2323 | AFP2323A | HFD5N40 | TK4P60DA | AFP2367AS

Keywords - TK4P55DA MOSFET datasheet

 TK4P55DA cross reference
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