TK4P55DA Specs and Replacement

Type Designator: TK4P55DA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.45 Ohm

Package: DPAK

TK4P55DA substitution

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TK4P55DA datasheet

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TK4P55DA

TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P55DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 2.0 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 1.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.4 to 4.4 ... See More ⇒

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TK4P55DA

TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P55D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.5 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode Vth = 2.4 to 4.... See More ⇒

 9.1. Size:210K  toshiba
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TK4P55DA

TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4P50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance Yfs = 1.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.4 to 4... See More ⇒

Detailed specifications: TK4A53D, TK4A55DA, TK4A55D, TK4A60DA, TK4A60DB, TK4A60D, TK4A65DA, TK4P50D, IRFZ46N, TK4P55D, TK4P60DA, TK4P60DB, TK50J30D, TK50J60U, TK50P03M1, TK50P04M1, TK50X15J1

Keywords - TK4P55DA MOSFET specs

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