BUK455-100A Datasheet and Replacement
Type Designator: BUK455-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO220AB
BUK455-100A substitution
BUK455-100A Datasheet (PDF)
buk455-100a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK455 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 26 23 A(SMPS),
buk455-100b.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK455-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK455 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 26 23 A(SMPS),
buk455-100.pdf

isc N-Channel MOSFET Transistor BUK455-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU
Datasheet: BUK445-200A , BUK446-1000B , BUK446-800A , BUK446-800B , BUK452-100A , BUK453-100A , BUK454-800A , BUK454-800B , IRF640N , BUK455-200A , BUK456-1000B , BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A .
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