BUK456-1000B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK456-1000B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5
Ohm
Package:
SOT78
BUK456-1000B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK456-1000B
Datasheet (PDF)
4.1. Size:55K philips
buk456-100b.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK456 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 34 32 A(SMPS),
4.2. Size:53K philips
buk456-100a-b 2.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK456 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 34 32 A(SMPS),
4.3. Size:228K inchange semiconductor
buk456-100.pdf
isc N-Channel MOSFET Transistor BUK456-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU
Datasheet: BUK446-800A
, BUK446-800B
, BUK452-100A
, BUK453-100A
, BUK454-800A
, BUK454-800B
, BUK455-100A
, BUK455-200A
, IRF3710
, BUK456-100A
, BUK456-200A
, BUK456-200B
, BUK456-800A
, BUK456-800B
, BUK462-100A
, BUK463-100A
, BUK465-100A
.
