TPC6012 PDF and Equivalents Search

 ..1. Size:211K  toshiba
 tpc6012.pdf

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPC6012 Notebook PC Applications Portable Equipment Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 20 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10 V, ID ... See More ⇒

 8.1. Size:212K  toshiba
 tpc6011.pdf

TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit mm Low drain-source ON-resistance RDS (ON) = 16 m (typ.) ( VGS = 10V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta ... See More ⇒

 8.2. Size:223K  toshiba
 tpc6010-h.pdf

TPC6010-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6010-H TPC6010-H TPC6010-H TPC6010-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.7 nC(typ.) (4) Low... See More ⇒

 9.1. Size:195K  toshiba
 tpc6007-h.pdf

TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit mm Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 1.8 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.) High forward transfer admittance ... See More ⇒

 9.2. Size:225K  toshiba
 tpc6008-h.pdf

TPC6008-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6008-H TPC6008-H TPC6008-H TPC6008-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 0.9 nC (typ.) (4) Lo... See More ⇒

 9.3. Size:198K  toshiba
 tpc6006-h.pdf

TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 2.4 nC (typ.) Low drain-source ON-resistance RDS (ON) = 59 m (typ.) High forward transfer... See More ⇒

 9.4. Size:225K  toshiba
 tpc6009-h.pdf

TPC6009-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6009-H TPC6009-H TPC6009-H TPC6009-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 1.0 nC (typ.) (4) Lo... See More ⇒

 9.5. Size:253K  toshiba
 tpc6005.pdf

TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance R = 21 m (typ.) DS (ON) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancementmode Vth = 0.5 to 1.2 V (VDS = ... See More ⇒

 9.6. Size:224K  toshiba
 tpc6067.pdf

TPC6067 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC6067 TPC6067 TPC6067 TPC6067 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 18 m (typ.) (VGS = 10 V) (3) Low leakage curren... See More ⇒

 9.7. Size:200K  toshiba
 tpc6001.pdf

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 15 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10... See More ⇒

 9.8. Size:230K  toshiba
 tpc6003.pdf

TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 7 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10... See More ⇒

 9.9. Size:230K  toshiba
 tpc6004.pdf

TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 1... See More ⇒

 9.10. Size:738K  cn wuxi unigroup
 tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf

TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒

 9.11. Size:865K  cn wuxi unigroup
 tpa60r240m tpb60r240m tpc60r240m tpp60r240m.pdf

TPA60R240M, TPB60R240M, TPC60R240M, TPP60R240M Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device TPA60R240M TPB6... See More ⇒

 9.12. Size:750K  cn wuxi unigroup
 tpp60r350c tpa60r350c tpu60r350c tpd60r350c tpc60r350c tpb60r350c.pdf

TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒

 9.13. Size:741K  cn wuxi unigroup
 tpp60r580c tpa60r580c tpu60r580c tpd60r580c tpc60r580c tpb60r580c.pdf

TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C,TPB60R580C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package ... See More ⇒

 9.14. Size:608K  cn wuxi unigroup
 tpp60r150c tpa60r150c tpv60r150c tpc60r150c.pdf

TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device P... See More ⇒