TPC6012 MOSFET. Datasheet pdf. Equivalent

   Type Designator: TPC6012
   Marking Code: S2M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT6 VS6

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TPC6012 Datasheet (PDF)

..1. Size:211K toshiba
tpc6012.pdf pdf_icon

TPC6012 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPC6012 Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 20 m (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID

8.1. Size:212K toshiba
tpc6011.pdf pdf_icon

TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 16 m (typ.) ( VGS = 10V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta

8.2. Size:223K toshiba
tpc6010-h.pdf pdf_icon

TPC6010-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6010-HTPC6010-HTPC6010-HTPC6010-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.7 nC(typ.)(4) Low

9.1. Size:195K toshiba
tpc6007-h.pdf pdf_icon

TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit: mm Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 1.8 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |

9.2. Size:225K toshiba
tpc6008-h.pdf pdf_icon

TPC6008-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6008-HTPC6008-HTPC6008-HTPC6008-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 0.9 nC (typ.)(4) Lo

9.3. Size:198K toshiba
tpc6006-h.pdf pdf_icon

TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 2.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 59 m (typ.) High forward transfer

9.4. Size:225K toshiba
tpc6009-h.pdf pdf_icon

TPC6009-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6009-HTPC6009-HTPC6009-HTPC6009-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.0 nC (typ.)(4) Lo

9.5. Size:253K toshiba
tpc6005.pdf pdf_icon

TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 21 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancementmode: Vth = 0.5 to 1.2 V (VDS =

9.6. Size:224K toshiba
tpc6067.pdf pdf_icon

TPC6067MOSFETs Silicon N-Channel MOS (U-MOS)TPC6067TPC6067TPC6067TPC60671. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 18 m (typ.) (VGS = 10 V)(3) Low leakage curren

9.7. Size:200K toshiba
tpc6001.pdf pdf_icon

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10

9.8. Size:230K toshiba
tpc6003.pdf pdf_icon

TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10

9.9. Size:230K toshiba
tpc6004.pdf pdf_icon

TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 1

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tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf pdf_icon

TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

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TPA60R240M, TPB60R240M, TPC60R240M, TPP60R240MWuxi Unigroup Microelectronics Company600V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice TPA60R240M TPB6

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TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

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