TPC8055-H
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8055-H
Marking Code: TPC8055H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 47
nC
trⓘ - Rise Time: 4.9
nS
Cossⓘ -
Output Capacitance: 1200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021
Ohm
Package:
SOP8
TPC8055-H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8055-H
Datasheet (PDF)
..1. Size:222K toshiba
tpc8055-h.pdf
TPC8055-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8055-HTPC8055-HTPC8055-HTPC8055-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
8.1. Size:200K toshiba
tpc8053-h.pdf
TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.1 m (typ.)
8.2. Size:226K toshiba
tpc8059-h.pdf
TPC8059-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8059-HTPC8059-HTPC8059-HTPC8059-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
8.3. Size:207K toshiba
tpc8050-h.pdf
TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)
8.4. Size:212K toshiba
tpc8052-h.pdf
TPC8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8052-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.4 m (typ.)
8.5. Size:206K toshiba
tpc8051-h.pdf
TPC8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8051-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.3 m (typ.) H
8.6. Size:223K toshiba
tpc8056-h.pdf
TPC8056-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8056-HTPC8056-HTPC8056-HTPC8056-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
8.7. Size:225K toshiba
tpc8057-h.pdf
TPC8057-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8057-HTPC8057-HTPC8057-HTPC8057-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
8.8. Size:224K toshiba
tpc8058-h.pdf
TPC8058-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8058-HTPC8058-HTPC8058-HTPC8058-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
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