TPC8058-H Specs and Replacement

Type Designator: TPC8058-H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SOP8

TPC8058-H substitution

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TPC8058-H datasheet

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TPC8058-H

TPC8058-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8058-H TPC8058-H TPC8058-H TPC8058-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change ... See More ⇒

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 tpc8053-h.pdf pdf_icon

TPC8058-H

TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.7 nC (typ.) Low drain-source ON-resistance RDS (ON) = 14.1 m (typ.) ... See More ⇒

 8.2. Size:226K  toshiba
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TPC8058-H

TPC8059-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8059-H TPC8059-H TPC8059-H TPC8059-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change ... See More ⇒

 8.3. Size:207K  toshiba
 tpc8050-h.pdf pdf_icon

TPC8058-H

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.2 nC (typ.) Low drain-source ON-resistance RDS (ON) = 9.3 m (typ.) ... See More ⇒

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Detailed specifications: TPC8049-H, TPC8050-H, TPC8051-H, TPC8052-H, TPC8053-H, TPC8055-H, TPC8056-H, TPC8057-H, 8N60, TPC8059-H, TPC8061-H, TPC8062-H, TPC8063-H, TPC8064-H, TPC8065-H, TPC8066-H, TPC8067-H

Keywords - TPC8058-H MOSFET specs

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