All MOSFET. TPC8085 Datasheet

 

TPC8085 Datasheet and Replacement


   Type Designator: TPC8085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: SOP8
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TPC8085 Datasheet (PDF)

 ..1. Size:221K  toshiba
 tpc8085.pdf pdf_icon

TPC8085

TPC8085MOSFETs Silicon N-Channel MOS (U-MOS)TPC8085TPC8085TPC8085TPC80851. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m

 8.1. Size:238K  toshiba
 tpc8084.pdf pdf_icon

TPC8085

TPC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPC8084TPC8084TPC8084TPC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.4 m (typ

 8.2. Size:222K  toshiba
 tpc8081.pdf pdf_icon

TPC8085

TPC8081MOSFETs Silicon N-Channel MOS (U-MOS)TPC8081TPC8081TPC8081TPC80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(3) Low leakage curren

 8.3. Size:220K  toshiba
 tpc8087.pdf pdf_icon

TPC8085

TPC8087MOSFETs Silicon N-Channel MOS (U-MOS)TPC8087TPC8087TPC8087TPC80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage curren

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History: LSF65R570GT | CSD16342Q5A

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