All MOSFET. TPC8086 Datasheet

 

TPC8086 Datasheet and Replacement


   Type Designator: TPC8086
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: SOP8
 

 TPC8086 substitution

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TPC8086 Datasheet (PDF)

 ..1. Size:227K  toshiba
 tpc8086.pdf pdf_icon

TPC8086

TPC8086MOSFETs Silicon N-Channel MOS (U-MOS)TPC8086TPC8086TPC8086TPC80861. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.0 m

 8.1. Size:238K  toshiba
 tpc8084.pdf pdf_icon

TPC8086

TPC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPC8084TPC8084TPC8084TPC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.4 m (typ

 8.2. Size:222K  toshiba
 tpc8081.pdf pdf_icon

TPC8086

TPC8081MOSFETs Silicon N-Channel MOS (U-MOS)TPC8081TPC8081TPC8081TPC80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(3) Low leakage curren

 8.3. Size:220K  toshiba
 tpc8087.pdf pdf_icon

TPC8086

TPC8087MOSFETs Silicon N-Channel MOS (U-MOS)TPC8087TPC8087TPC8087TPC80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage curren

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Datasheet: TPC8075 , TPC8076 , TPC8078 , TPC8080 , TPC8081 , TPC8082 , TPC8084 , TPC8085 , HY1906P , TPC8087 , TPC8088 , TPC8092 , TPC8120 , TPC8123 , TPC8124 , TPC8125 , TPC8126 .

History: SI2302ADS | STH240N10F7-2

Keywords - TPC8086 MOSFET datasheet

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