TPC8126 MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8126
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP8
TPC8126 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8126 Datasheet (PDF)
tpc8126.pdf
TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
tpc8127.pdf
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (
tpc8122.pdf
TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8122 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.3 m (typ.) High forward transfer admittance: |Yfs| = 30S (typ.) Low leakage current: IDSS = -10A (max) (VDS = -30 V
tpc8123.pdf
TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max
tpc8120.pdf
TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = -10 A (max)
tpc8129.pdf
TPC8129MOSFETs Silicon P-Channel MOS (U-MOS)TPC8129TPC8129TPC8129TPC81291. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 17 m (typ.) (VGS = -
tpc8125.pdf
TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
tpc8124.pdf
TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.1 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V
tpc8128.pdf
TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 3.9 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
tpc8121.pdf
TPC8121 PMOS (U-MOS) TPC8121 PC : mm 2 : RDS (ON) = 8.0 m () : |Yfs| = 23 S (
tpc8127.pdf
TPC8127www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
tpc8123.pdf
TPC8123www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
tpc8129.pdf
TPC8129www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG
tpc8121.pdf
TPC8121www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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