TPC8A05-H Specs and Replacement

Type Designator: TPC8A05-H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0133 Ohm

Package: SOP8

TPC8A05-H substitution

- MOSFET ⓘ Cross-Reference Search

 

TPC8A05-H datasheet

 ..1. Size:231K  toshiba
 tpc8a05-h.pdf pdf_icon

TPC8A05-H

TPC8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A05-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage V = 0.6 V (max) DSF High-speed switching Small gate charge QSW = 3.7 ... See More ⇒

 8.1. Size:279K  toshiba
 tpc8a07-h.pdf pdf_icon

TPC8A05-H

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge (Q1) QSW = 3.4 nC (typ.) (Q2) QSW = ... See More ⇒

 8.2. Size:316K  toshiba
 tpc8a01.pdf pdf_icon

TPC8A05-H

TPC8A01 Q1 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) Q2 TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) TPC8A01 Unit mm DC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage V =0.6V(Max.) DSF Small footprint due to ... See More ⇒

 8.3. Size:217K  toshiba
 tpc8a04-h.pdf pdf_icon

TPC8A05-H

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 13 nC (ty... See More ⇒

SHOW MORE

Detailed specifications: TPC8134, TPC8221-H, TPC8223-H, TPC8224-H, TPC8407, TPC8408, TPC8A03-H, TPC8A04-H, AO3400, TPC8A06-H, TPCA8006-H, TPCA8008-H, TPCA8010-H, TPCA8011-H, TPCA8024, TPCA8025, TPCA8026

Keywords - TPC8A05-H MOSFET specs

 TPC8A05-H cross reference

 TPC8A05-H equivalent finder

 TPC8A05-H pdf lookup

 TPC8A05-H substitution

 TPC8A05-H replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.