TPCF8004 PDF and Equivalents Search

 

TPCF8004 Specs and Replacement


   Type Designator: TPCF8004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: VS8
 

 TPCF8004 substitution

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TPCF8004 datasheet

 ..1. Size:229K  toshiba
tpcf8004.pdf pdf_icon

TPCF8004

TPCF8004 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCF8004 TPCF8004 TPCF8004 TPCF8004 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 10 V) (3) Low leakage curr... See More ⇒

 7.1. Size:232K  toshiba
tpcf8003.pdf pdf_icon

TPCF8004

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8003 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2... See More ⇒

 7.2. Size:229K  toshiba
tpcf8002.pdf pdf_icon

TPCF8004

TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance RDS (ON) = 16 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V... See More ⇒

 7.3. Size:252K  toshiba
tpcf8001.pdf pdf_icon

TPCF8004

TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 8 S (typ.) Low leakage current IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (V ... See More ⇒

Detailed specifications: TPCC8093 , TPCC8103 , TPCC8104 , TPCC8105 , TPCC8131 , TPCC8A01-H , TPCF8002 , TPCF8003 , AON7403 , TPCF8101 , TPCF8105 , TPCF8107 , TPCF8108 , TPCF8201 , TPCF8301 , TPCF8304 , TPCF8305 .

History: RUH60D60M

Keywords - TPCF8004 MOSFET specs

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