BUK543-100A Datasheet and Replacement
Type Designator: BUK543-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SOT186
BUK543-100A substitution
BUK543-100A Datasheet (PDF)
buk543-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.
buk543-100b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.
buk543-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 13 12 ASw
Datasheet: BUK462-100A , BUK463-100A , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , IRFP260 , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A .
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