BUK543-100A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK543-100A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
SOT186
BUK543-100A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK543-100A
Datasheet (PDF)
0.1. Size:58K philips
buk543-100a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.
4.1. Size:63K philips
buk543-100b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 8.3 7.
7.1. Size:56K philips
buk543-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK543 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 13 12 ASw
Datasheet: BUK462-100A
, BUK463-100A
, BUK465-100A
, BUK465-200A
, BUK466-200A
, BUK473-100A
, BUK473-100B
, BUK482-100A
, IRFP260
, BUK545-100A
, BUK545-100B
, BUK552-100A
, BUK552-100B
, BUK553-100A
, BUK555-100A
, BUK555-100B
, BUK555-200A
.
