All MOSFET. 2SJ619 Datasheet

 

2SJ619 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ619
   Marking Code: J619
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TFP

 2SJ619 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ619 Datasheet (PDF)

 ..1. Size:314K  toshiba
 2sj619.pdf

2SJ619 2SJ619

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance: R = 0.15 (typ.) DS (ON) High forward transfer admittance: Y = 7.7 S (typ.) fs Low leakage current: IDSS = -100 A (max) (V = -10

 9.1. Size:143K  1
 2sj618.pdf

2SJ619 2SJ619

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOS) 2SJ618 High-Power Amplifier Applications Unit: mm15.9 MAX. 3.2 0.2 High breakdown voltage: VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1 2 3 Drain-source v

 9.2. Size:331K  toshiba
 2sj610.pdf

2SJ619 2SJ619

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.85 (typ.) High forward transfer admittance: |Y | = 18 S (typ.) fs Low leakage current: I = -100 A (V = -250 V) DSS DS Enhancement-mode: V = -1.5~-3.5 V

 9.3. Size:32K  sanyo
 2sj616.pdf

2SJ619 2SJ619

Ordering number : ENN72702SJ616P-Channel Silicon MOSFET2SJ616Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive.[2SJ616]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Rati

 9.4. Size:28K  sanyo
 2sj612.pdf

2SJ619 2SJ619

Ordering number : ENN71782SJ612P-Channel Silicon MOSFET2SJ612Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 2.5V drive.[2SJ612]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.752 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum R

 9.5. Size:28K  sanyo
 2sj615.pdf

2SJ619 2SJ619

Ordering number : ENN71792SJ615P-Channel Silicon MOSFET2SJ615Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive.[2SJ615]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.752 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Rat

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