All MOSFET. 2SJ676 Datasheet

 

2SJ676 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ676

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 2.5 A

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TPS

2SJ676 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ676 Datasheet (PDF)

5.1. 2sj673.pdf Size:280K _upd

2SJ676
2SJ676

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. 2sj670.pdf Size:37K _sanyo

2SJ676
2SJ676

Ordering number : EN8354A 2SJ670 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ670 Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage V

5.3. 2sj673.pdf Size:153K _nec

2SJ676
2SJ676

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m? MAX. (VGS = -10 V, ID = -18 A)

Datasheet: 2SJ509 , 2SJ512 , 2SJ516 , 2SJ525 , 2SJ618 , 2SJ619 , 2SJ620 , 2SJ669 , IRFZ24N , 2SK1119 , 2SK1120 , 2SK1381 , 2SK1382 , 2SK1486 , 2SK1529 , 2SK1530 , 2SK1544 .

 


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