2SK2266 Specs and Replacement
Type Designator: 2SK2266
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
2SK2266 substitution
- MOSFET ⓘ Cross-Reference Search
2SK2266 datasheet
2sk2266.pdf
2SK2266 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2266 Chopper Regulator, DC DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 22 m (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem... See More ⇒
2sk2267.pdf
2SK2267 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2267 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 8 m (typ.) DS (ON) High forward transfer admittance Y = 60 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancement... See More ⇒
2sk2260.pdf
Ordering number ENN4753 N-Channel Silicon MOSFET 2SK2260 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2260] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 Gate 3.0 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta =... See More ⇒
2sk2275.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2... See More ⇒
2sk2208.pdf
2SK2208 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 5I 100 A V = 900V, V = 0V D A DSS DS GS I 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS... See More ⇒
2sk2229.pdf
2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2229 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem... See More ⇒
2sk2231.pdf
2SK2231 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2231 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem... See More ⇒
2sk2201.pdf
2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance... See More ⇒
2sk2233.pdf
2SK2233 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2233 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.022 (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhanc... See More ⇒
2sk2274.pdf
2SK2274 5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK2274 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Y = 2.5 S (typ.) fs Low leakage current I = 300 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 1.5... See More ⇒
2sk2232.pdf
2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2232 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 36 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode ... See More ⇒
2sk2200.pdf
2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance... See More ⇒
2sk223.pdf
Ordering number EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions Ultrahigh withstand voltage (VGDS 80V). unit mm Due to low gate leakage currents even at high 2019B voltage, the 2SK223 is suitable for a wide range of [2SK223] application (IGDL=1nA/VDS=50V, ID=1mA). 5.0 4.0 4.0 High yfs ( yfs =... See More ⇒
2sk222.pdf
Ordering number EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features Package Dimensions Ultralow noise figure. unit mm Large yfs . 2019B Low gate leakage current. [2SK222] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Source 2 Gate 3 Drain 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Specifications A... See More ⇒
2sk2273.pdf
Ordering number ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK2273] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter ... See More ⇒
2sk2219.pdf
Ordering number ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK2219- unit mm applied sets to be made small and slim. 2058A Especially suited for use in audio, telephone capaci- [2SK2219] tor microphones. Excellent voltage characteristic. 0.3 0.15 Excellent transien... See More ⇒
2sk2218.pdf
Ordering number ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm Amateur radio equipment. 2125 UHF amplifiers, MIX, OSC, analog switches. [2SK2218] Large yfs . 4.5 Small Ciss. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Source 2 Gate 0.75 3 Dra... See More ⇒
rej03g1005 2sk2225ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk2225.pdf
2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package... See More ⇒
rej03g1002 2sk2202ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk2225-80-e.pdf
Data Sheet 2SK2225-80-E R07DS1275EJ0100 1500V - 2A - MOS FET Rev.1.00 Jun 22, 2015 High Speed Power Switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current Outline RENESAS Package code PRSS0003ZD-A (Package name TO-3PF) D 1. Gate G 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S... See More ⇒
rej03g1004 2sk2220 2sk2221.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk2220.pdf
2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics ... See More ⇒
2sk2247.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk2202.pdf
2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A ... See More ⇒
2sk2294.pdf
Transistors Switching (800V, 3A) 2SK2294 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 10... See More ⇒
2sk2299n.pdf
Transistors Switching (450V, 7A) 2SK2299N FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 1... See More ⇒
2sk2277.pdf
Silicon MOS FETs (Small Signal) 2SK2277 2SK2277 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta... See More ⇒
2sk2211.pdf
Silicon MOS FETs (Small Signal) 2SK2211 2SK2211 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta... See More ⇒
2sk2210.pdf
Power F-MOS FETs 2SK2210 2SK2210 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm... See More ⇒
2sk2276.pdf
Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS Unit mm For switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drain Drain-Source breakdown voltage VDSS 60 V ... See More ⇒
2sk2272-01r.pdf
2SK2272-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching TO-3PF Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Equivalent ci... See More ⇒
2sk2253-01m.pdf
N-channel MOS-FET 2SK2253-01M FAP-IIA Series 250V 0,5 8A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒
2sk2252-01l-01s.pdf
N-channel MOS-FET 2SK2252-01L,S FAP-IIA Series 250V 0,5 8A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒
2sk2223.pdf
N-channel MOS-FET 2SK2223-01R FAP-IIA Series 500V 0,76 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Eq... See More ⇒
2sk2224-01r.pdf
FUJI POWER MOSFET 2SK2224-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5 0.3 Low on-resistance 0.3 0.2 15.5 3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 Applications 0.2 0.2 5.45 5.45 0.6+0.2 Switc... See More ⇒
2sk2255-01mr.pdf
2SK2255-01MR N-channel MOS-FET FAP-IIA Series 250V 0,18 18A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters www.DataSheet4U.com - General Purpose Power Amplifier > Maximum Ratings and ... See More ⇒
2sk2251-01.pdf
N-channel MOS-FET 2SK2251-01 FAP-IIA Series 250V 2 2A 20W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivale... See More ⇒
2sk2220 2sk2221.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
2sk2207.pdf
2SK2207 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 3I 100 A V = 900V, V = 0V D A DSS DS GS I 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS... See More ⇒
2sk2211.pdf
SMD Type MOSFET N-Channel MOSFET 2SK2211 1.70 0.1 Features VDS (V) = 30V ID = 1A 0.42 0.1 RDS(ON) 0.75 (VGS = 4V) 0.46 0.1 RDS(ON) 0.6 (VGS = 10V) D G 1.Gate 2.Drain 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1 A... See More ⇒
2sk2231.pdf
2SK2231 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor ... See More ⇒
2sk2253-01m.pdf
isc N-Channel MOSFET Transistor 2SK2253-01M DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai... See More ⇒
2sk2221.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2221 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch ... See More ⇒
2sk2258.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2258 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
2sk2236.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2236 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V ... See More ⇒
2sk2274.pdf
isc N-Channel MOSFET Transistor 2SK2274 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
2sk2237.pdf
isc N-Channel MOSFET Transistor 2SK2237 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain... See More ⇒
2sk2257-01.pdf
isc N-Channel MOSFET Transistor 2SK2257-01 DESCRIPTION Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
2sk2299.pdf
isc N-Channel MOSFET Transistor 2SK2299 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS ... See More ⇒
2sk2224-01.pdf
isc N-Channel MOSFET Transistor 2SK2224-01 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
2sk2251-01.pdf
isc N-Channel MOSFET Transistor 2SK2251-01 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
2sk2291.pdf
isc N-Channel MOSFET Transistor 2SK2291 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
2sk2257.pdf
isc N-Channel MOSFET Transistor 2SK2257 DESCRIPTION Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
2sk2223-01.pdf
isc N-Channel MOSFET Transistor 2SK2223-01 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor control UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAM... See More ⇒
Detailed specifications: 2SK2162, 2SK2173, 2SK2200, 2SK2201, 2SK2229, 2SK2231, 2SK2232, 2SK2233, IRFZ24N, 2SK2267, 2SK2311, 2SK2312, 2SK2313, 2SK2314, 2SK2350, 2SK2376, 2SK2381
Keywords - 2SK2266 MOSFET specs
2SK2266 cross reference
2SK2266 equivalent finder
2SK2266 pdf lookup
2SK2266 substitution
2SK2266 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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