All MOSFET. 2SK2385 Datasheet

 

2SK2385 Datasheet and Replacement


   Type Designator: 2SK2385
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO220NIS
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2SK2385 Datasheet (PDF)

 ..1. Size:288K  toshiba
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2SK2385

 8.1. Size:393K  toshiba
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2SK2385

2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.

 8.2. Size:411K  toshiba
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2SK2385

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

 8.3. Size:32K  panasonic
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2SK2385

Power F-MOS FETs 2SK23832SK2383Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

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History: NCEP85T11 | IRFZ48RS | 10N60L-T2Q-T | AO3402 | WSD30L30DN | AO4415 | IPI47N10S-33

Keywords - 2SK2385 MOSFET datasheet

 2SK2385 cross reference
 2SK2385 equivalent finder
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