2SK2399 Datasheet and Replacement

2SK2399 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2399 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.17 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2398 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 22 m (typ.) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V (V = 10 V, I = 1 mA)

2SK2391 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2391 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 66 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhanceme

Ordering number:ENN4840N-Channel Junction Silicon FET2SK2395Low-Noise HF Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier.unit:mm Low-noise amplifier.2034A[2SK2395]2.24.0Features Large | yfs |. Small Ciss.0.40.5 Ultralow noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.03.8nom SANYO : SPAS

Ordering number:EN4839AN-Channel Junction Silicon FET2SK2394Low-Noise HF Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier.unit:mm Low-noise amplifier.2050A[2SK2394]Features0.40.16 Large yfs .3 Small Ciss.0 to 0.1 Small-sized package permitting 2SK2394-appliedsets to be made small slim. Ultralow noise figure

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

N-channel MOS-FET2SK2397-01MRFAP-II Series 800V 2,3 5A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

2SK2390Silicon N-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220CFM1D231. Gate G2. Drain 3. SourceS2SK2390Absolute

2SK2393Silicon N-Channel MOS FETApplicationHigh voltage / High speed power switchingFeatures Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor ControlOutlineTO-3PLDG1231. Gate2. Drain(Flange)S3. Source2SK2393Absolute Maximum Ratings (Ta = 25

isc N-Channel MOSFET Transistor 2SK2398DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL