2SK2508 Specs and Replacement
Type Designator: 2SK2508
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO220NIS
2SK2508 substitution
- MOSFET ⓘ Cross-Reference Search
2SK2508 datasheet
2sk2508.pdf
2SK2508 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2508 Switching Regulator and DC-DC Converter and Motor Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Y = 13 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V ... See More ⇒
2sk2507.pdf
2SK2507 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2507 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 0.034 (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 50 V) Enhancement mode... See More ⇒
2sk2504tl.pdf
2SK2504 Transistors 4V Drive Nch MOS FET 2SK2504 Structure External dimensions (Unit mm) Silicon N-channel MOS FET CPT3 6.5 5.1 2.3 0.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.75 4) 4V drive. 0.65 0.9 2.3 (1)Gate 5) Drive circuits can be simple. 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 6) Parallel use is e... See More ⇒
Detailed specifications: 2SK2399, 2SK2400, 2SK2401, 2SK2417, 2SK2466, 2SK2467, 2SK2493, 2SK2507, AOD4184A, 2SK2542, 2SK2543, 2SK2544, 2SK2545, 2SK2549, 2SK2598, 2SK2599, 2SK2603
Keywords - 2SK2508 MOSFET specs
2SK2508 cross reference
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