2SK2604
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2604
Marking Code: K2604
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2
Ohm
Package:
TO3P
2SK2604
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2604
Datasheet (PDF)
..1. Size:404K toshiba
2sk2604.pdf 
2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2604 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D
8.1. Size:413K toshiba
2sk2607.pdf
2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper Regulator, DC-DC Converter and Moter Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.0 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0
8.2. Size:413K toshiba
2sk2608.pdf
2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 3.73 (typ.) (ON) High forward transfer admittance : |Y | 2.6 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D
8.3. Size:410K toshiba
2sk2603.pdf
2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2603 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 3.0 (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0
8.4. Size:147K toshiba
2sk2606.pdf
2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2606 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 1.0 (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 640 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 1
8.5. Size:407K toshiba
2sk2602.pdf
2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2602 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 0.9 (typ.) (ON) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMa
8.6. Size:412K toshiba
2sk2601.pdf
2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2601 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.75 (typ.) (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
8.7. Size:411K toshiba
2sk2605.pdf
2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2605 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D
8.9. Size:228K inchange semiconductor
2sk260.pdf
isc N-Channel MOSFET Transistor 2SK260DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
8.10. Size:260K inchange semiconductor
2sk2608.pdf
isc N-Channel MOSFET Transistor 2SK2608FEATURESStatic drain-source on-resistance:RDS(on) 3.78(TYP)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25
8.11. Size:208K inchange semiconductor
2sk2601.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2601FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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