All MOSFET. 2SK2789 Datasheet

 

2SK2789 Datasheet and Replacement


   Type Designator: 2SK2789
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO220FL TO220SM
 

 2SK2789 substitution

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2SK2789 Datasheet (PDF)

 ..1. Size:428K  toshiba
 2sk2789.pdf pdf_icon

2SK2789

2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 66 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement

 8.1. Size:418K  toshiba
 2sk2782.pdf pdf_icon

2SK2789

2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2782 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.039 (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancemen

 8.2. Size:76K  renesas
 r07ds0511ej 2sk2788.pdf pdf_icon

2SK2789

Preliminary Datasheet 2SK2788 R07DS0511EJ0300(Previous: REJ03G1033-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jul 27, 2011Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK) D1

 8.3. Size:78K  renesas
 2sk2788.pdf pdf_icon

2SK2789

2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous: ADE-208-538) Rev.2.00 Sep.07,2005 Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )D12 1. Gate32. Dra

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Datasheet: 2SK2744 , 2SK2745 , 2SK2746 , 2SK2749 , 2SK2750 , 2SK2776 , 2SK2777 , 2SK2782 , 7N65 , 2SK2835 , 2SK2837 , 2SK2838 , 2SK2839 , 2SK2841 , 2SK2842 , 2SK2843 , 2SK2844 .

History: MTH5N100 | WM05N02M | LSF65R290HF | NTD4854N-1G | MTH15N40

Keywords - 2SK2789 MOSFET datasheet

 2SK2789 cross reference
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 2SK2789 replacement

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