2SK2843
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2843
Marking Code: K2843
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 45
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 590
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package:
TO220NIS
2SK2843
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2843
Datasheet (PDF)
..1. Size:411K toshiba
2sk2843.pdf 
2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.54 (typ.) (ON) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V
..2. Size:280K inchange semiconductor
2sk2843.pdf
isc N-Channel MOSFET Transistor 2SK2843FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.2. Size:417K toshiba
2sk2841.pdf
2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.4 (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 400 V) Enhancement mode : Vth = 2.0 to 4.0 V (VD
8.3. Size:408K toshiba
2sk2846.pdf
2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 4.2 (typ.) (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~
8.4. Size:411K toshiba
2sk2847.pdf
2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1
8.5. Size:411K toshiba
2sk2845.pdf
2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 8.0 (typ.) High forward transfer admittance : |Y | = 0.9 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V
8.6. Size:425K toshiba
2sk2842.pdf
2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.4 (typ.) (ON) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V
8.7. Size:426K toshiba
2sk2844.pdf
2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 16 m (typ.) DS (ON) High forward transfer admittance : |Y | = 26 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 30 V) DS Enhancement-
8.8. Size:43K sanken-ele
2sk2848.pdf
2SK2848External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 600 V I = 100A, V = 0V(BR) DSS D GSV 600 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 600V, V = 0VDSS DS GSI 2ADV 2.0 3.0 4.0 V V = 10V, I = 250ATH DS DI 8
8.9. Size:289K inchange semiconductor
2sk2841.pdf
isc N-Channel MOSFET Transistor 2SK2841FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.10. Size:274K inchange semiconductor
2sk2847.pdf
isc N-Channel MOSFET Transistor 2SK2847FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.11. Size:252K inchange semiconductor
2sk2848.pdf
isc N-Channel MOSFET Transistor 2SK2848FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.12. Size:356K inchange semiconductor
2sk2849s.pdf
isc N-Channel MOSFET Transistor 2SK2849SFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.13. Size:255K inchange semiconductor
2sk2842.pdf
isc N-Channel MOSFET Transistor 2SK2842FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
8.14. Size:282K inchange semiconductor
2sk2849l.pdf
isc N-Channel MOSFET Transistor 2SK2849LFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.15. Size:289K inchange semiconductor
2sk2844.pdf
isc N-Channel MOSFET Transistor 2SK2844FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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