All MOSFET. 2SK2883 Datasheet

 

2SK2883 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2883

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Maximum Drain-Source On-State Resistance (Rds): 3.6 Ohm

Package: TO220FL_SM

2SK2883 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2883 Datasheet (PDF)

1.1. 2sk2883.pdf Size:430K _toshiba

2SK2883
2SK2883

2SK2883 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2883 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

4.1. 2sk2885l-s.pdf Size:34K _update

2SK2883
2SK2883

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Dr

4.2. 2sk2880.pdf Size:114K _update

2SK2883
2SK2883

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN   Keep safety in your circuit designs ! ・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

 4.3. 2sk2889.pdf Size:417K _toshiba

2SK2883
2SK2883

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2889 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.54 ? (typ.) High forward transfer admittance : |Y | = 9.0 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 600 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V (V

4.4. 2sk2882.pdf Size:318K _toshiba

2SK2883
2SK2883



 4.5. 2sk2884.pdf Size:427K _toshiba

2SK2883
2SK2883

2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2884 Chopper Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.9 ? (typ.) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 m

4.6. 2sk2886.pdf Size:423K _toshiba

2SK2883
2SK2883

2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2886 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 14 m? (typ.) (ON) High forward transfer admittance : |Y | = 31 S (typ.) fs Low leakage current : I = 100 µA (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V (V =

4.7. 2sk2887 1-5.pdf Size:135K _rohm

2SK2883
2SK2883

4.8. 2sk2887.pdf Size:139K _rohm

2SK2883
2SK2883

Transistors Switching (200V, 3A) 2SK2887 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 166

4.9. 2sk2885.pdf Size:38K _hitachi

2SK2883
2SK2883

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features Low on-resistance RDS(on) = 10m? typ. 4V gate drive devices. High speed switching Outline LDPAK 4 4 D 1 2 3 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to sourc

4.10. 2sk2881.pdf Size:103K _isahaya

2SK2883
2SK2883

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the p

Datasheet: 2SK2841 , 2SK2842 , 2SK2843 , 2SK2844 , 2SK2846 , 2SK2862 , 2SK2866 , 2SK2882 , IRFP4227 , 2SK2884 , 2SK2886 , 2SK2889 , 2SK2914 , 2SK2915 , 2SK2920 , 2SK2949 , 2SK2952 .

 
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