2SK2952 PDF and Equivalents Search

 

2SK2952 Specs and Replacement

Type Designator: 2SK2952

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO220NIS

2SK2952 substitution

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2SK2952 datasheet

 ..1. Size:414K  toshiba
2sk2952.pdf pdf_icon

2SK2952

2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2952 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS = 0.4 (typ.) (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Maxi... See More ⇒

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2sk294 2sk295.pdf pdf_icon

2SK2952

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2sk2954-mr.pdf pdf_icon

2SK2952

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 8.3. Size:87K  1
2sk2958stl.pdf pdf_icon

2SK2952

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK... See More ⇒

Detailed specifications: 2SK2883, 2SK2884, 2SK2886, 2SK2889, 2SK2914, 2SK2915, 2SK2920, 2SK2949, 5N65, 2SK2961, 2SK2965, 2SK2967, 2SK2972, 2SK2985, 2SK2986, 2SK2991, 2SK2993

Keywords - 2SK2952 MOSFET specs

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