2SK2972 Specs and Replacement
Type Designator: 2SK2972
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220NIS
2SK2972 substitution
- MOSFET ⓘ Cross-Reference Search
2SK2972 datasheet
2sk2976.pdf
Ordering number ENN6003 N-Channel Silicon MOSFET 2SK2976 DC-DC Converter Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2083B [2SK2976] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP 2092B [2SK2976] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0.2 2 ... See More ⇒
2sk2977 2sk2977ls.pdf
Ordering number ENN6423 N-Channel Silicon MOSFET 2SK2977LS DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2078B [2SK2977LS] 4.5 10.0 2.8 3.2 0.9 1.2 1.2 0.7 0.75 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO220FI-LS Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating... See More ⇒
2sk2978.pdf
2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd. Edition Jun 1998 Features Low on-resistance RDS(on) = 0.09 typ. (VGS = 4 V, ID = 1.5 A) Low drive current High speed switching 2.5V gate drive devices. Outline UPAK 1 2 3 D 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25 C) Item ... See More ⇒
Detailed specifications: 2SK2914, 2SK2915, 2SK2920, 2SK2949, 2SK2952, 2SK2961, 2SK2965, 2SK2967, IRF530, 2SK2985, 2SK2986, 2SK2991, 2SK2993, 2SK2995, 2SK2996, 2SK3051, 2SK3067
Keywords - 2SK2972 MOSFET specs
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