All MOSFET. 2SK2986 Datasheet

 

2SK2986 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2986
   Marking Code: K2986
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 210 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1435 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220FL TO220SM

 2SK2986 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2986 Datasheet (PDF)

 ..1. Size:433K  toshiba
 2sk2986.pdf

2SK2986 2SK2986

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2986 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 4.5 m (typ.) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10

 8.1. Size:424K  toshiba
 2sk2985.pdf

2SK2986 2SK2986

2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2985 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 70 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10

 8.2. Size:136K  toshiba
 2sk2989.pdf

2SK2986 2SK2986

2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK2989 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 120 m (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V

 8.3. Size:426K  toshiba
 2sk2987.pdf

2SK2986 2SK2986

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2987 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V =

 8.4. Size:81K  renesas
 2sk2980.pdf

2SK2986 2SK2986

2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 (Previous: ADE-208-571B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.2 typ. (VGS = 4 V, ID = 500 mA) 2.5 V gate drive devices. Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31G 1. Source22. Gate3. DrainS

 8.5. Size:123K  hitachi
 2sk298 2sk299.pdf

2SK2986 2SK2986

 8.6. Size:277K  inchange semiconductor
 2sk298.pdf

2SK2986 2SK2986

isc N-Channel MOSFET Transistor 2SK298FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.75(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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