All MOSFET. 2SK3399 Datasheet

 

2SK3399 Datasheet and Replacement


   Type Designator: 2SK3399
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220FL TO220SM
 

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2SK3399 Datasheet (PDF)

 ..1. Size:220K  toshiba
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2SK3399

2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3399 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ) High forward transfer admittance: |Yfs| = 5.2 S (typ) Low leakage current: IDSS = 100 A (max) (VDSS = 600 V) Enhancementmode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 0.1. Size:282K  inchange semiconductor
 2sk3399k.pdf pdf_icon

2SK3399

isc N-Channel MOSFET Transistor 2SK3399KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.2. Size:356K  inchange semiconductor
 2sk3399b.pdf pdf_icon

2SK3399

isc N-Channel MOSFET Transistor 2SK3399BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:190K  toshiba
 2sk3398.pdf pdf_icon

2SK3399

2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 m (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-mode: Vth

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Datasheet: 2SK3316 , 2SK3342 , 2SK3374 , 2SK3387 , 2SK3388 , 2SK3389 , 2SK3397 , 2SK3398 , EMB04N03H , 2SK3403 , 2SK3407 , 2SK3417 , 2SK3437 , 2SK3439 , 2SK3440 , 2SK3441 , 2SK3442 .

Keywords - 2SK3399 MOSFET datasheet

 2SK3399 cross reference
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 2SK3399 replacement

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